Experimental characterisation of nanoelectronic devices at cryogenic temperatures

Abstract

This work presents the experimental characterisation of the behaviour at different temperatures of integrated transistors in a commercial integrated circuit in CMOS technology. The temperature range of interest covers the usual operating range of these devices (from -40 ºC to +80 ºC) and also includes the characterisation at ultra-low temperatures up to the cryogenic regime at 4 K.